AP54RHC10

The AP54RHC10 is a radiation-hardened by design Triple 3-Input NAND gate that is ideally suited for space, medical imaging, high-energy physics and other applications demanding radiation tolerance and high reliability. It is fabricated in a 180 nm CMOS process utilizing proprietary radiation-hardening techniques, delivering high resiliency to single-event effects (SEE) and to a total ionizing dose (TID) up to 30 krad (Si).

This device is a member of the Apogee Semiconductor AP54RHC logic family operating across a voltage supply range of 1.65 V to 5.5 V.

Zero-power penalty™ cold-sparing is supported, along with Class 2 ESD protection on all inputs and outputs. A proprietary output stage and robust power-on reset (POR) circuit allow the AP54RHC10 to be cold-spared in any redundant configuration with no static power loss on any pad of the device. The redundant output stage also features a high drive capability with low static power loss.

The AP54RHC10 also features a triple-redundant design throughout its entire circuitry, which allows it to be immune to single-event transients (SET) without requiring additional redundant devices.

This device provides three instances of the Boolean logical function NAND.