AF54RHC805

The AF54RHC805 is a radiation-hardened by design 8-channel level translator with 3-state outputs that is ideally suited for space, medical imaging and other applications demanding radiation tolerance and high reliability. It is fabricated in a 180 nm CMOS process utilizing proprietary radiation-hardening techniques, delivering high resiliency to single-event effects (SEE) and to a total ionizing dose (TID) to 300 krad (Si).

This device is a member of the Apogee Semiconductor AF54RHC logic family. All members of this family operate across a full 1.65 V to 5.5 V range providing the system designer flexibility in logic-level interfaces. The AF54RHC805 can operate across this range on both of its supply voltage inputs, VCCA and VCCY.

An output enable control pin allows the outputs to be placed in a high impedance (high-Z) state, simplifying usage in applications with shared busses or mixed power domains. Additionally, the outputs are placed in high-Z when VCCA is not present, ensuring that no loading or leakage paths are experienced at the output nodes when the input rail is not powered.

Zero-power penalty™ cold-sparing is supported, along with Class 2 ESD protection on all inputs and outputs.

A proprietary output stage and robust power-on reset (POR) circuit allow the AF54RHC805 to be cold-spared in any redundant configuration with no static power loss on any pad of the device. The redundant output stage also features a high drive capability with low static power loss.

The AF54RHC805 also features a triple-redundant design throughout its entire circuitry, which allows it to be immune to single-event transients (SET) without requiring additional redundant devices.