AF54RHC11

Radiation Hardened Triple 3-input AND Gate

Coming Soon

AF54RHC11

Datasheets

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AF54RHC11 Block
AF54RHC11 Block

Product Overview

The AF54RHC11 is a radiation-hardened by design Triple 3-Input AND gate that is ideally suited for space, nuclear imaging and other applications demanding radiation tolerance and high reliability. It is fabricated in a 180 nm CMOS process utilizing proprietary radiation-hardening techniques, delivering high resiliency to single-event effects (SEE) and to a total ionizing dose (TID) up to 300 krad (Si).

This device is a member of the Apogee Semiconductor AF54RHC logic family operating across a voltage supply range of 1.65 V to 5.5 V.

Zero-power penalty™ cold-sparing is supported, along with Class 2 ESD protection on all inputs and outputs. A proprietary output stage and robust power-on reset (POR) circuit allow the AF54RHC11 to be cold-spared in any redundant configuration with no static power loss on any pad of the device. The redundant output stage also features a high drive capability with low static power loss.

The AF54RHC11 also features a triple-redundant design throughout its entire circuitry, which allows it to be immune to single-event transients (SET) without requiring additional redundant devices.

This device provides three instances of the boolean logical function AND (Y = A · B · C).

  • 1.65 VDC to 5 VDC operation
  • Inputs tolerant up to 5.5 VDC at any VCC
  • Provides logic-level down translation to VCC
  • Extended operating temperature range (-55°C to +125°C)
  • Proprietary cold-sparing capability with zero static power penalty
  • Built-in triple redundancy for enhanced reliability
  • Internal low-loss power-on reset (POR) circuitry ensures reliable power up and power down responses during hot plug and cold sparing operations
  • Class 2 ESD protection (4000 V HBM, 500 V CDM)
  • TID resilience of 300 krad (Si)
  • SEL resilient up to LET 80 MeV-cm2/mg
  • MEO/GEO Satellites
  • Deep Space Exploration
  • Glue Logic

Order

Part NumberPedigreePackagePinsBurn-InLead FinishTID
[krad (Si)]
SEL
[MeV/mg/cm2]
RFQPurchase
AF54RHC11ELT-REvaluationTSSOP14NoSnPb30080Contact UsContact Us
AF54RHC11CLT-RFlight Grade 'C'TSSOP14NoSnPb30080Contact UsContact Us
AF54RHC11BLT-RFlight Grade 'B' TSSOP14NoSnPb30080Contact UsContact Us
AF54RHC11ALT-RFlight Grade 'A' TSSOP14YesSnPb30080Contact UsContact Us
AF54RHC11ENT-REvaluationTSSOP14NoNiPdAu30080Contact UsContact Us
AF54RHC11CNT-RFlight Grade 'C'TSSOP14NoNiPdAu30080Contact UsContact Us
AF54RHC11BNT-RFlight Grade 'B' TSSOP14NoNiPdAu30080Contact UsContact Us
AF54RHC11ANT-RFlight Grade 'A' TSSOP14YesNiPdAu30080Contact UsContact Us

Development Boards

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