AF54RHC506

AF54RHC506

Radiation Hardened 5-Channel Bus Transceiver

Available Now

Datasheets

Product Overview

The AF54RHC506 is a radiation-hardened by design 5-bit bus transceiver with 3-state outputs that is ideally suited for space, medical imaging and other applications demanding radiation tolerance and high reliability. It is fabricated in a 180 nm CMOS process utilizing proprietary radiation-hardening techniques, delivering high resiliency to single-event effects (SEE) and to a total ionizing dose (TID) up to 300 krad (Si).

This device is a member of the Apogee Semiconductor AF54RHC logic family operating across a voltage supply range of 1.65 V to 5.5 V.

An output enable control pin allows all buffers to be placed in a high impedance (high-Z) state, simplifying usage in applications with shared busses or mixed power domains. A direction control pin is used to determine whether data flow is A→B or B→A.

Zero-power penalty™ cold-sparing is supported, along with Class 2 ESD protection on all inputs and outputs. A proprietary output stage and robust power-on reset (POR) circuit allow the AF54RHC506 to be cold-spared in any redundant configuration with no static power loss on any pad of the device. The redundant output stage also features a high drive capability with low static power loss.

The AF54RHC506 also features a triple-redundant design throughout its entire circuitry, which allows it to be immune to single-event transients (SET) without requiring additional redundant devices.

  • 1.65 VDC to 5 VDC operation
  • Inputs tolerant up to 5.5 VDC at any VCC
  • Provides logic-level down translation to VCC
  • Extended operating temperature range (-55°C to +125°C)
  • Proprietary cold-sparing capability with zero static power penalty
  • Built-in triple redundancy for enhanced reliability
  • Internal low-loss power-on reset (POR) circuitry ensures reliable power up and power down responses during hot plug and cold sparing operations
  • Class 2 ESD protection (4000 V HBM, 500 V CDM)
  • TID resilience of 30 krad (Si) or 300 krad (Si)
  • SEL resilient up to LET 80 MeV-cm2/mg
  • LEO Constellations
  • Small satellites
  • Medical Imaging

Order

Part
Number
Pedigree Package Pins Burn-In Lead
Finish
TID
kRad (Si)
SEL
MeV/mg/cm2
RFQ Purchase
AP54RHC506ELT Evaluation TSSOP 14 No SnPb 300 80 Contact Us

AP54RHC506BLT Flight TSSOP 14 No SnPb 300 80 Contact Us

AP54RHC506ALT Flight TSSOP 14 Yes SnPb 300 80 Contact Us Contact Us

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8 + 6 =

Apogee Semiconductor
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Plano, TX 75074

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AF54RHC301

AF54RHC301

Radiation Hardened Dual 3-input Majority Voter with Error Output

Available Now

Datasheets

Product Overview

The AF54RHC301 is a radiation-hardened by design dual 3-Input Majority Voter that is ideally suited for space, medical imaging and other applications demanding radiation tolerance and high reliability. It is fabricated in a 180 nm CMOS process utilizing proprietary radiation-hardening techniques, delivering high resiliency to single-event effects (SEE) and to a total ionizing dose (TID) up to 300 krad (Si).

This device is a member of the Apogee Semiconductor AF54RHC logic family operating across a voltage supply range of 1.65 V to 5.5 V.

The AF54RHC301 is an unique discrete majority voter logic function that offers two instances of a triple-input voter gate, with individual error outputs. In addition, a dedicated “error detected” indication is available, in addition to an external error input signal.

Zero-power penalty™ cold-sparing is supported, along with Class 2 ESD protection on all inputs and outputs. A proprietary output stage and robust power-on reset (POR) circuit allow the AF54RHC301 to be cold-spared in any redundant configuration with no static power loss on any pad of the device. The redundant output stage also features a high drive capability with low static power loss.

The AF54RHC301 also features a triple-redundant design throughout its entire circuitry, which allows it to be immune to single-event transients (SET) without requiring additional redundant devices.

  • 1.65 VDC to 5 VDC operation
  • Inputs tolerant up to 5.5 VDC at any VCC
  • Provides logic-level down translation to VCC
  • Extended operating temperature range (-55°C to +125°C)
  • Proprietary cold-sparing capability with zero static power penalty
  • Built-in triple redundancy for enhanced reliability
  • Internal low-loss power-on reset (POR) circuitry ensures reliable power up and power down responses during hot plug and cold sparing operations
  • Class 2 ESD protection (4000 V HBM, 500 V CDM)
  • TID resilience of 30 krad (Si) or 300 krad (Si)
  • SEL resilient up to LET 80 MeV-cm2/mg
  • LEO Constellations
  • Small satellites
  • Medical Imaging

Order

Part
Number
Pedigree Package Pins Burn-In Lead
Finish
TID
kRad (Si)
SEL
MeV/mg/cm2
RFQ Purchase
AP54RHC301ELT Evaluation TSSOP 14 No SnPb 300 80 Contact Us

Micross Components

Mouser

AP54RHC301BLT Flight TSSOP 14 No SnPb 300 80 Contact Us

Micross Components

Mouser

AP54RHC301ALT Flight TSSOP 14 Yes SnPb 300 80 Contact Us Contact Us

Development Boards

Contact Us for information on available development boards

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9 + 3 =

Apogee Semiconductor
840 Central Parkway East, Suite 140
Plano, TX 75074

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© 2023 Apogee Semiconductor All Rights Reserved

AF54RHC14

AF54RHC14

Radiation Hardened Hex Inverter with Schmitt Inputs

Sampling Now

Datasheets

Product Overview

The AF54RHC14 is a radiation-hardened by design hex Schmitt inverter that is ideally suited for space, medical imaging and other applications demanding radiation tolerance and high reliability. It is fabricated in a 180 nm CMOS process utilizing proprietary radiation-hardening techniques, delivering high resiliency to single-event effects (SEE) and to a total ionizing dose (TID) up to 300 krad (Si).

This device is a member of the Apogee Semiconductor AF54RHC14 logic family operating across a voltage supply range of 1.65 V to 5.5 V.

The AF54RHC14 features true Schmitt triggers on each of its input buffers, providing hysteresis to accommodate slow-rising or noisy input signals without any input rise or fall time requirements.

Zero-power penalty™ cold-sparing is supported, along with Class 2 ESD protection on all inputs and outputs. A proprietary output stage and robust power-on reset (POR) circuit allow the AF54RHC14 to be cold-spared in any redundant configuration with no static power loss on any pad of the device. The redundant output stage also features a high drive capability with low static power loss.

The AF54RHC14 also features a triple-redundant design throughout its entire circuitry, which allows it to be immune to single-event transients (SET) without requiring additional redundant devices.

This device provides six instances of the Boolean logical function INVERTER.

 

  • 1.65 VDC to 5 VDC operation
  • Inputs tolerant up to 5.5 VDC at any VCC
  • Provides logic-level down translation to VCC
  • Extended operating temperature range (-55°C to +125°C)
  • Proprietary cold-sparing capability with zero static power penalty
  • Built-in triple redundancy for enhanced reliability
  • Internal low-loss power-on reset (POR) circuitry ensures reliable power up and power down responses during hot plug and cold sparing operations
  • Class 2 ESD protection (4000 V HBM, 500 V CDM)
  • TID resilience of 30 krad (Si) or 300 krad (Si)
  • SEL resilient up to LET 80 MeV-cm2/mg
  • LEO Constellations
  • Small satellites
  • Medical Imaging

Order

Part
Number
Pedigree Package Pins Size Lead
Finish
TID
kRad (Si)
SEL
MeV/mg/cm2
RFQ Purchase
AP54RHC14ELT-W Evaluation TSSOP 14 6.50×5.11×0.94 SnPb 300 80 Contact Us Contact Us
AP54RHC14ALT-T Flight TSSOP 14 6.50×5.11×0.94 SnPb 300 80 Contact Us Contact Us

Development Boards

Contact Us for information on available development boards

If you don’t see what you need, please let us know by contacting us at sales@apogeesemi.com

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11 + 6 =

Apogee Semiconductor
840 Central Parkway East, Suite 140
Plano, TX 75074

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© 2023 Apogee Semiconductor All Rights Reserved

AF54RHC04

AF54RHC04

Radiation Hardened Hex Inverter

Sampling Now

Datasheets

Product Overview

The AF54RHC04 is a radiation-hardened by design hex inverter that is ideally suited for space, medical imaging and other applications demanding radiation tolerance and high reliability. It is fabricated in a 180 nm CMOS process utilizing proprietary radiation-hardening techniques, delivering high resiliency to singleevent effects (SEE) and to a total ionizing dose (TID) up to 300 krad (Si).

This device is a member of the Apogee Semiconductor AF54RHC logic family operating across a voltage supply range of 1.65 V to 5.5 V.

Zero-power PENATLY™ cold-sparing is supported, along with Class 2 ESD protection on all inputs and outputs. A proprietary output stage and robust power-on reset (POR) circuit allow the AF54RHC04 to be cold-spared in any redundant configuration with no static power loss on any pad of the device. The redundant output stage also features a high drive capability with low static power loss.

The AF54RHC04 also features a triple-redundant design throughout its entire circuitry, which allows it to be immune to singleevent transients (SET) without requiring additional redundant devices.

This device provides six instances of the Boolean logical function INVERTER (Y = Ā).

Ordering information may be found in Table 9 on Page 11.

  • 1.65 VDC to 5 VDC operation
  • Inputs tolerant up to 5.5 VDC at any VCC
  • Provides logic-level down translation to VCC
  • Extended operating temperature range (-55°C to +125°C)
  • Proprietary cold-sparing capability with zero static power penalty
  • Built-in triple redundancy for enhanced reliability
  • Internal low-loss power-on reset (POR) circuitry ensures reliable power up and power down responses during hot plug and cold sparing operations
  • Class 2 ESD protection (4000 V HBM, 500 V CDM)
  • TID resilience of 30 krad (Si) or 300 krad (Si)
  • SEL resilient up to LET 80 MeV-cm2/mg
  • LEO Constellations
  • Small satellites
  • Medical Imaging

Order

Part
Number
Pedigree Package Pins Size Lead
Finish
TID
kRad (Si)
SEL
MeV/mg/cm2
RFQ Purchase
AP54RHC04ELT-W Evaluation TSSOP 14 6.50×5.11×0.94 SnPb 300 80 Contact Us Contact Us
AP54RHC04ALT-T Flight TSSOP 14 6.50×5.11×0.94 SnPb 300 80 Contact Us Contact Us

Development Boards

Contact Us for information on available development boards

If you don’t see what you need, please let us know by contacting us at sales@apogeesemi.com

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15 + 4 =

Apogee Semiconductor
840 Central Parkway East, Suite 140
Plano, TX 75074

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© 2023 Apogee Semiconductor All Rights Reserved

AF54RHC132

AF54RHC132

Radiation Hardened Quad 2-input NAND Gate with Schmitt Inputs

Sampling Now

Datasheets

Product Overview

The A54RHC132 is a radiation-hardened by design quad Schmitt 2-input NAND that is ideally suited for space, medical imaging and other applications demanding radiation tolerance and high reliability. It is fabricated in a 180 nm CMOS process utilizing proprietary radiation-hardening techniques, delivering high resiliency to single-event effects (SEE) and to a total ionizing dose (TID) up to 300 krad (Si).

This device is a member of the Apogee Semiconductor A54RHC logic family operating across a voltage supply range of 1.65 V to 5.5 V.

The A54RHC132 features true Schmitt triggers on each of its input buffers, providing hysteresis to accommodate slow-rising or noisy input signals without any input rise or fall-time requirements.

Zero-power permalloy™ cold-sparing is supported, along with Class 2 ESD protection on all inputs and outputs. A proprietary output stage and robust power-on reset (POR) circuit allow the A54RHC132 to be cold-spared in any redundant configuration with no static power loss on any pad of the device. The redundant output stage also features a high drive capability with low static power loss.

The A54RHC132 also features a triple-redundant design throughout its entire circuitry, which allows it to be immune to single-event transients (SET) without requiring additional redundant devices.

This device provides four instances of the Boolean logical function NAND (Y = A · B).

  • 1.65 VDC to 5 VDC operation
  • Inputs tolerant up to 5.5 VDC at any VCC
  • Provides logic-level down translation to VCC
  • Extended operating temperature range (-55°C to +125°C)
  • Proprietary cold-sparing capability with zero static power penalty
  • Built-in triple redundancy for enhanced reliability
  • Internal low-loss power-on reset (POR) circuitry ensures reliable power up and power down responses during hot plug and cold sparing operations
  • Class 2 ESD protection (4000 V HBM, 500 V CDM)
  • TID resilience of 30 krad (Si) or 300 krad (Si)
  • SEL resilient up to LET 80 MeV-cm2/mg
  • LEO Constellations
  • Small satellites
  • Medical Imaging

Order

Part
Number
Pedigree Package Pins Size (mm) Lead
Finish
TID
kRad (Si)
SEL
MeV/mg/cm2
RFQ Purchase
AP54RHC132ELTP-W Evaluation TSSOP 14 6.50×5.11×0.94 SnPb 300 80 Contact Us Contact Us
AP54RHC132ALTP-T Flight TSSOP 14 6.50×5.11×0.94 SnPb 300 80 Contact Us Contact Us

Development Boards

Contact Us for information on available development boards

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4 + 11 =

Apogee Semiconductor
840 Central Parkway East, Suite 140
Plano, TX 75074

Privacy Policy     •     Terms of Sale     •     Cookie Policy
© 2023 Apogee Semiconductor All Rights Reserved