AP54RHC288

AP54RHC288

Radiation Hardened Two-Channel Dual-Input Arbiter

Available Now

Datasheets

Product Overview

The AP54RHC288 is a radiation-hardened by design Two-Channel Dual-Input Arbiter that is ideally suited for space, medical imaging and other applications demanding radiation tolerance and high reliability. It is fabricated in a 180 nm CMOS process utilizing proprietary radiation-hardening techniques, delivering high
resiliency to single-event effects (SEE) and to a total ionizing dose (TID) up to 30 krad (Si).

The AP54RHC288 provides protection for critical applications by ensuring that on each channel only one output can be high, regardless of the signal state at the inputs. This feature is ideal for half-bridge drivers, power supplies, thrusters, and other applications where crossconduction must be avoided. This device is a member of the Apogee Semiconductor AP54RHC logic family operating across a voltage supply range of 1.65 V to 5.5 V.

Zero-power penalty™ cold-sparing is supported, along with Class 2 ESD protection on all inputs and outputs. A proprietary output stage and robust power-on reset (POR) circuit allow the AP54RHC288 to be cold-spared in any redundant configuration with no static power loss on any pad of the device. The redundant output stage also features a high drive capability with low static power loss.

The AP54RHC288 also features a triple-redundant design throughout its entire circuitry, which allows it to be immune to single-event transients (SET) without requiring additional redundant devices.

  • 1.65 VDC to 5.5 VDC operation
  • Inputs tolerant up to 5.5 VDC at any VCC
  • Provides logic-level down translation to VCC
  • Extended operating temperature range (-55 °C to +125 °C)
  • Proprietary cold-sparing capability with zero static power penalty
  • Built-in triple redundancy for enhanced reliability
  • Internal power-on reset (POR) circuitry ensures reliable power up and power down responses during hot plug and cold sparing operations
  • Tri-state output drivers
  • Class 2 ESD protection (4000 V HBM, 500 V CDM)
  • TID resilience of 30 krad (Si)
  • SEL resilient up to LET of 80 MeV-cm2/mg
  • LEO Constellations
  • Small satellites
  • Medical Imaging

Order

Part
Number
Pedigree Package Pins Burn-In Lead
Finish
TID
kRad (Si)
SEL
MeV/mg/cm2
RFQ Purchase
AP54RHC288ELT-W Evaluation TSSOP 14 No SnPb 30 80 Contact Us

Contact Us

AP54RHC288BLT-R Flight TSSOP 14 No SnPb 30 80 Contact Us

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AP54RHC288ALT-R Flight TSSOP 14 Yes SnPb 30 80 Contact Us Contact Us

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AP54RHC08

AP54RHC08

Radiation Hardened Quad 2-input AND Gate

Sampling Now

Datasheets

Datasheets

Datasheets

AP54RHC08 Block

AP54RHC08

Product Overview

The AP54RHC08 is a radiation-hardened by design Quad 2-Input AND gate that is ideally suited for space, medical imaging, high-energy physics and other applications demanding radiation tolerance and high reliability. It is fabricated in a 180 nm CMOS process utilizing proprietary radiation-hardening techniques, delivering high resiliency to single-event effects (SEE) and to a total ionizing dose (TID) up to 30 krad (Si).

This device is a member of the Apogee Semiconductor AP54RHC logic family operating across a voltage supply range of 1.65 V to 5.5 V.

Zero-power penalty™ cold-sparing is supported, along with Class 2 ESD protection on all inputs and outputs. A proprietary output stage and robust power-on reset (POR) circuit allow the AP54RHC08 to be cold-spared in any redundant configuration with no static power loss on any pad of the device. The redundant output stage also features a high drive capability with low static power loss.

The AP54RHC08 also features a triple-redundant design throughout its entire circuitry, which allows it to be immune to single-event transients (SET) without requiring additional redundant devices.

This device provides four instances of the Boolean logical function AND (Y = A·B).

  • 1.65 VDC to 5 VDC operation
  • Inputs tolerant up to 5.5 VDC at any VCC
  • Provides logic-level down translation to VCC
  • Extended operating temperature range (-55°C to +125°C)
  • Proprietary cold-sparing capability with zero static power penalty
  • Built-in triple redundancy for enhanced reliability
  • Internal low-loss power-on reset (POR) circuitry ensures reliable power up and power down responses during hot plug and cold sparing operations
  • Class 2 ESD protection (4000 V HBM, 500 V CDM)
  • TID resilience of 30 krad (Si) or 300 krad (Si)
  • SEL resilient up to LET 80 MeV-cm2/mg
  • LEO Constellations
  • Small satellites
  • Medical Imaging

Documentation

Contact Us for information regarding quality and realibility.

Order

Part Number Pedigree Package Pins Size (mm) Lead Finish TID kRad (Si) SEL MeV/mg/cm2 RFQ Purchase
AP54RHC08ELT-W Evaluation TSSOP 14 6.50×5.11×0.94 SnPb 30 80 Contact Us Contact Us
AP54RHC08ALT-T Flight TSSOP 14 6.50×5.11×0.94 SnPb 30 80 Contact Us Contact Us

Development Boards

Contact Us for information on available development boards

If you don’t see what you need, please let us know by contacting us at sales@apogeesemi.com

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1 + 8 =

Apogee Semiconductor
840 Central Parkway East, Suite 140
Plano, TX 75074

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© 2023 Apogee Semiconductor All Rights Reserved

AP54RHC705

AP54RHC705

Dual D Flip-Flop with Asynchronous Clear

Preview

Datasheets

Product Overview

The AP54RHC705 is a radiation-hardened by design Dual D Flip Flop that is ideally suited for space, medical imaging, high-energy physics and other applications demanding radiation tolerance and high reliability. It is fabricated in a 180 nm CMOS process utilizing proprietary radiation-hardening techniques, delivering high resiliency to single-event eff­ects (SEE) and to a total ionizing dose (TID) up to 30 krad (Si).

This device is a member of the Apogee Semiconductor AP54RHC logic family operating across a voltage supply range of 1.65 V to 5.5 V.

Zero-power penalty cold-sparing is supported, along with Class 2 ESD protection on all inputs and outputs. A proprietary output stage and robust power-on reset (POR) circuit allow the AP54RHC705 to be cold-spared in any redundant configuration with no static power loss on any pad of the device. The redundant output stage also features a high drive capability with low static power loss.

The AP54RHC705 also features a triple-redundant design throughout its entire circuitry, which allows it to be immune to single-event transients (SET) without requiring additional redundant devices.

  • 1.65 VDC to 5 VDC operation
  • Inputs tolerant up to 5.5 VDC at any VCC
  • Provides logic-level down translation to VCC
  • Extended operating temperature range (-55°C to +125°C)
  • Proprietary cold-sparing capability with zero static power penalty
  • Built-in triple redundancy for enhanced reliability
  • Internal low-loss power-on reset (POR) circuitry ensures reliable power up and power down responses during hot plug and cold sparing operations
  • Class 2 ESD protection (4000 V HBM, 500 V CDM)
  • TID resilience of 30 krad (Si) or 300 krad (Si)
  • SEL resilient up to LET 80 MeV-cm2/mg
  • LEO Constellations
  • Small satellites
  • Medical Imaging

Order

Part
Number
Pedigree Package Pins Size (mm) Lead
Finish
TID
kRad (Si)
SEL
MeV/mg/cm2
RFQ Purchase
AP54RHC705ELT-W Evaluation TSSOP 14 6.50×5.11×0.94 SnPb 30 80 Contact Us Contact Us
AP54RHC705ALT-T Flight TSSOP 14 6.50×5.11×0.94 SnPb 30 80 Contact Us Contact Us

Development Boards

Contact Us for information on available development boards

If you don’t see what you need, please let us know by contacting us at sales@apogeesemi.com

Contact Us

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Apogee Semiconductor
840 Central Parkway East, Suite 140
Plano, TX 75074

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© 2023 Apogee Semiconductor All Rights Reserved

AP54RHC05

AP54RHC05

Radiation Hardened Hex Inverter with Open-drain Outputs

Preview

Datasheets

Product Overview

The AP54RHC05 is a radiation-hardened by design Hex Inverter with open-drain outputs that is ideally suited for space, medical imaging, high-energy physics and other applications demanding radiation tolerance and high reliability. It is fabricated in a 180 nm CMOS process utilizing proprietary radiation-hardening techniques, delivering high resiliency to single-event effects (SEE) and to a total ionizing dose (TID) up to 30 krad (Si).

This device is a member of the Apogee Semiconductor AP54RHC logic family operating across a voltage supply range of 1.65 V to 5.5 V.

Zero-power penalty cold-sparing is supported, along with Class 2 ESD protection on all inputs and outputs. A proprietary output stage and robust power-on reset (POR) circuit allow the AP54RHC05 to be cold-spared in any redundant configuration with no static power loss on any pad of the device. The redundant output stage also features a high drive capability with low static power loss.

The AP54RHC05 also features a triple-redundant design throughout its entire circuitry, which allows it to be immune to single-event transients (SET) without requiring additional redundant devices.

This device provides six instances of the Boolean logical function NOT.

  • 1.65 VDC to 5 VDC operation
  • Open-drain outputs
  • Inputs tolerant up to 5.5 VDC at any VCC
  • Provides logic-level down translation to VCC
  • Extended operating temperature range (-55°C to +125°C)
  • Proprietary cold-sparing capability with zero static power penalty
  • Built-in triple redundancy for enhanced reliability
  • Internal low-loss power-on reset (POR) circuitry ensures reliable power up and power down responses during hot plug and cold sparing operations
  • Class 2 ESD protection (4000 V HBM, 500 V CDM)
  • TID resilience of 30 krad (Si) or 300 krad (Si)
  • SEL resilient up to LET 80 MeV-cm2/mg
  • LEO Constellations
  • Small satellites
  • Medical Imaging

Order

Part Number Pedigree Package Pins Size Lead Finish TID kRad (Si) SEL MeV/mg/cm2 RFQ Purchase
AP54RHC05ELT-W Evaluation TSSOP 14 6.50×5.11×0.94 SnPb 30 80 Contact Us Contact Us
AP54RHC05ALT-T Flight TSSOP 14 6.50×5.11×0.94 SnPb 30 80 Contact Us Contact Us

Development Boards

Contact Us for information on available development boards

If you don’t see what you need, please let us know by contacting us at sales@apogeesemi.com

Contact Us

15 + 11 =

Apogee Semiconductor
840 Central Parkway East, Suite 140
Plano, TX 75074

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© 2023 Apogee Semiconductor All Rights Reserved

AP54RHC10

AP54RHC10

Radiation Hardened Triple 3-input NAND Gate

Sampling Now

Datasheets

Product Overview

The AP54RHC10 is a radiation-hardened by design Triple 3-Input NAND gate that is ideally suited for space, medical imaging, high-energy physics and other applications demanding radiation tolerance and high reliability. It is fabricated in a 180 nm CMOS process utilizing proprietary radiation-hardening techniques, delivering high resiliency to single-event effects (SEE) and to a total ionizing dose (TID) up to 30 krad (Si).

This device is a member of the Apogee Semiconductor AP54RHC logic family operating across a voltage supply range of 1.65 V to 5.5 V.

Zero-power penalty™ cold-sparing is supported, along with Class 2 ESD protection on all inputs and outputs. A proprietary output stage and robust power-on reset (POR) circuit allow the AP54RHC10 to be cold-spared in any redundant configuration with no static power loss on any pad of the device. The redundant output stage also features a high drive capability with low static power loss.

The AP54RHC10 also features a triple-redundant design throughout its entire circuitry, which allows it to be immune to single-event transients (SET) without requiring additional redundant devices.

This device provides three instances of the Boolean logical function NAND.

  • 1.65 VDC to 5 VDC operation
  • Inputs tolerant up to 5.5 VDC at any VCC
  • Provides logic-level down translation to VCC
  • Extended operating temperature range (-55°C to +125°C)
  • Proprietary cold-sparing capability with zero static power penalty
  • Built-in triple redundancy for enhanced reliability
  • Internal low-loss power-on reset (POR) circuitry ensures reliable power up and power down responses during hot plug and cold sparing operations
  • Class 2 ESD protection (4000 V HBM, 500 V CDM)
  • TID resilience of 30 krad (Si) or 300 krad (Si)
  • SEL resilient up to LET 80 MeV-cm2/mg

 

  • LEO Constellations
  • Small satellites
  • Medical Imaging

 

 

Order

Part
Number
Pedigree Package Pins Size Lead
Finish
TID
kRad (Si)
SEL
MeV/mg/cm2
RFQ Purchase
AP54RHC10ELT-W Evaluation TSSOP 14 6.50×5.11×0.94 SnPb 30 80 Contact Us Contact Us
AP54RHC10ALT-T Flight TSSOP 14 6.50×5.11×0.94 SnPb 30 80 Contact Us Contact Us

Development Boards

Contact Us for information on available development boards

If you don’t see what you need, please let us know by contacting us at sales@apogeesemi.com

Contact Us

6 + 2 =

Apogee Semiconductor
840 Central Parkway East, Suite 140
Plano, TX 75074

Privacy Policy     •     Terms of Sale     •     Cookie Policy
© 2023 Apogee Semiconductor All Rights Reserved