Radiation Hardened 8-Channel 100 MHz transceiver

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AF54RHC806 Block
AF54RHC806 Block

Product Overview

The AF54RHC806 is a radiation-hardened by design 8-bit bus transceiver with 3-state outputs that is ideally suited for space, medical imaging and other applications demanding radiation tolerance and high reliability. It is fabricated in a 180 nm CMOS process utilizing proprietary radiation-hardening techniques, delivering high resiliency to single-event effects (SEE) and to a total ionizing dose (TID) to 300 krad (Si).

This device is a member of the Apogee Semiconductor AF54RHC logic family operating across a voltage supply range of 1.65 V to 5.5 V.

An output enable control pin allows all buffers to be placed in a high impedance (high-Z) state, simplifying usage in applications with shared busses or mixed power domains. A direction control pin is used to determine whether data flow is A→B or B→A.

Zero-power penalty™ cold-sparing is supported, along with Class 2 ESD protection on all inputs and outputs. A proprietary output stage and robust power-on reset (POR) circuit allow the AF54RHC806 to be cold-spared in any redundant configuration with no static power loss on any pad of the device. The redundant output stage also features a high drive capability with low static power loss.

The AF54RHC806 also features a triple-redundant design throughout its entire circuitry, which allows it to be immune to single-event transients (SET) without requiring additional redundant devices.

  • 1.65 VDC to 5 VDC operation
  • Inputs tolerant up to 5.5 VDC at any VCC
  • Provides logic-level down translation to VCC
  • Extended operating temperature range (-55°C to +125°C)
  • Proprietary cold-sparing capability with zero static power penalty
  • Built-in triple redundancy for enhanced reliability
  • Internal low-loss power-on reset (POR) circuitry ensures reliable power up and power down responses during hot plug and cold sparing operations
  • Class 2 ESD protection (4000 V HBM, 500 V CDM)
  • TID resilience of 300 krad (Si)
  • SEL resilient up to LET 80 MeV-cm2/mg
  • MEO/GEO Satellites
  • Deep Space Exploration
  • Nuclear Imaging
  • Interface


Part NumberPedigreePackagePinsBurn-InLead FinishTID
[krad (Si)]
AF54RHC806ENT-REvaluationTSSOP20NoNiPdAu30080Contact UsContact Us
AF54RHC806CNT-RFlight Grade 'C'TSSOP20NoNiPdAu30080Contact UsContact Us
AF54RHC806BNT-RFlight Grade 'B'TSSOP20NoNiPdAu30080Contact UsContact Us
AF54RHC806ANT-RFlight Grade 'A'TSSOP20YesNiPdAu30080Contact UsContact Us

Development Boards

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