AP54RHC27

AP54RHC27

Radiation Hardened Triple 3-input NOR Gate

Sampling Now

Datasheets

Product Overview

The AP54RHC27 is a radiation-hardened by design Triple 3-Input NOR gate that is ideally suited for space, medical imaging, high-energy physics and other applications demanding radiation tolerance and high reliability. It is fabricated in a 180 nm CMOS process utilizing proprietary radiation-hardening techniques, delivering high resiliency to single-event effects (SEE) and to a total ionizing dose (TID) up to 30 krad (Si).

This device is a member of the Apogee Semiconductor AP54RHC logic family operating across a voltage supply range of 1.65 V to 5.5 V.

Zero-power penalty™ cold-sparing is supported, along with Class 2 ESD protection on all inputs and outputs. A proprietary output stage and robust power-on reset (POR) circuit allow the AP54RHC27 to be cold-spared in any redundant configuration with no static power loss on any pad of the device. The redundant output stage also features a high drive capability with low static power loss.

The AP54RHC27 also features a triple-redundant design throughout its entire circuitry, which allows it to be immune to single-event transients (SET) without requiring additional redundant devices.

This device provides three instances of the Boolean logical function NOR.

  • 1.65 VDC to 5 VDC operation
  • Inputs tolerant up to 5.5 VDC at any VCC
  • Provides logic-level down translation to VCC
  • Extended operating temperature range (-55°C to +125°C)
  • Proprietary cold-sparing capability with zero static power penalty
  • Built-in triple redundancy for enhanced reliability
  • Internal low-loss power-on reset (POR) circuitry ensures reliable power up and power down responses during hot plug and cold sparing operations
  • Class 2 ESD protection (4000 V HBM, 500 V CDM)
  • TID resilience of 30 krad (Si) or 300 krad (Si)
  • SEL resilient up to LET 80 MeV-cm2/mg
  • LEO Constellations
  • Small satellites
  • Medical Imaging

Order

Part Number Pedigree Package Pins Size Lead Finish TID kRad (Si) SEL MeV/mg/cm2 RFQ Purchase
AP54RHC27ELT-W Evaluation TSSOP 14 6.50×5.11×0.94 SnPb 30 80 Contact Us Contact Us
AP54RHC27ALT-T Flight TSSOP 14 6.50×5.11×0.94 SnPb 30 80 Contact Us Contact Us

Development Boards

Contact Us for information on available development boards

If you don’t see what you need, please let us know by contacting us at sales@apogeesemi.com

Contact Us

12 + 2 =

Apogee Semiconductor
840 Central Parkway East, Suite 140
Plano, TX 75074

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© 2023 Apogee Semiconductor All Rights Reserved

AP54RHC02

AP54RHC02

Radiation Hardened Quad 2-input NOR Gate

Sampling Now

Datasheets

Product Overview

The AP54RHC02 is a radiation-hardened by design Quad 2-Input NOR gate that is ideally suited for space, medical imaging, high-energy physics and other applications demanding radiation tolerance and high reliability. It is fabricated in a 180 nm CMOS process utilizing proprietary radiation-hardening techniques, delivering high resiliency to single-event effects (SEE) and to a total ionizing dose (TID) up to 30 krad (Si).

This device is a member of the Apogee Semiconductor AP54RHC logic family operating across a voltage supply range of 1.65 V to 5.5 V.

Zero-power penalty™ cold-sparing is supported, along with Class 2 ESD protection on all inputs and outputs. A proprietary output stage and robust power-on reset (POR) circuit allow the AP54RHC02 to be cold-spared in any redundant configuration with no static power loss on any pad of the device. The redundant output stage also features a high drive capability with low static power loss.

The AP54RHC02 also features a triple-redundant design throughout its entire circuitry, which allows it to be immune to single-event transients (SET) without requiring additional redundant devices.

This device provides four instances of the Boolean logical function NOR.

  • 1.65 VDC to 5 VDC operation
  • Inputs tolerant up to 5.5 VDC at any VCC
  • Provides logic-level down translation to VCC
  • Extended operating temperature range (-55°C to +125°C)
  • Proprietary cold-sparing capability with zero static power penalty
  • Built-in triple redundancy for enhanced reliability
  • Internal low-loss power-on reset (POR) circuitry ensures reliable power up and power down responses during hot plug and cold sparing operations
  • Class 2 ESD protection (4000 V HBM, 500 V CDM)
  • TID resilience of 30 krad (Si) or 300 krad (Si)
  • SEL resilient up to LET 80 MeV-cm2/mg
  • LEO Constellations
  • Small satellites
  • Medical Imaging

Order

Part Number Pedigree Package Pins Size Lead Finish TID kRad (Si) SEL MeV/mg/cm2 RFQ Purchase
AP54RHC02ELT-W Evaluation TSSOP 14 6.50×5.11×0.94 SnPb 30 80 Contact Us Contact Us
AP54RHC02ALT-T Flight TSSOP 14 6.50×5.11×0.94 SnPb 30 80 Contact Us Contact Us

Development Boards

Contact Us for information on available development boards

If you don’t see what you need, please let us know by contacting us at sales@apogeesemi.com

Contact Us

5 + 14 =

Apogee Semiconductor
840 Central Parkway East, Suite 140
Plano, TX 75074

Privacy Policy     •     Terms of Sale     •     Cookie Policy
© 2023 Apogee Semiconductor All Rights Reserved