AF54RHC132

AF54RHC132

Radiation Hardened Quad 2-input NAND Gate with Schmitt Inputs

Sampling Now

Datasheets

Product Overview

The A54RHC132 is a radiation-hardened by design quad Schmitt 2-input NAND that is ideally suited for space, medical imaging and other applications demanding radiation tolerance and high reliability. It is fabricated in a 180 nm CMOS process utilizing proprietary radiation-hardening techniques, delivering high resiliency to single-event effects (SEE) and to a total ionizing dose (TID) up to 300 krad (Si).

This device is a member of the Apogee Semiconductor A54RHC logic family operating across a voltage supply range of 1.65 V to 5.5 V.

The A54RHC132 features true Schmitt triggers on each of its input buffers, providing hysteresis to accommodate slow-rising or noisy input signals without any input rise or fall-time requirements.

Zero-power permalloy™ cold-sparing is supported, along with Class 2 ESD protection on all inputs and outputs. A proprietary output stage and robust power-on reset (POR) circuit allow the A54RHC132 to be cold-spared in any redundant configuration with no static power loss on any pad of the device. The redundant output stage also features a high drive capability with low static power loss.

The A54RHC132 also features a triple-redundant design throughout its entire circuitry, which allows it to be immune to single-event transients (SET) without requiring additional redundant devices.

This device provides four instances of the Boolean logical function NAND (Y = A · B).

  • 1.65 VDC to 5 VDC operation
  • Inputs tolerant up to 5.5 VDC at any VCC
  • Provides logic-level down translation to VCC
  • Extended operating temperature range (-55°C to +125°C)
  • Proprietary cold-sparing capability with zero static power penalty
  • Built-in triple redundancy for enhanced reliability
  • Internal low-loss power-on reset (POR) circuitry ensures reliable power up and power down responses during hot plug and cold sparing operations
  • Class 2 ESD protection (4000 V HBM, 500 V CDM)
  • TID resilience of 30 krad (Si) or 300 krad (Si)
  • SEL resilient up to LET 80 MeV-cm2/mg
  • LEO Constellations
  • Small satellites
  • Medical Imaging

Order

Part
Number
Pedigree Package Pins Size (mm) Lead
Finish
TID
kRad (Si)
SEL
MeV/mg/cm2
RFQ Purchase
AP54RHC132ELTP-W Evaluation TSSOP 14 6.50×5.11×0.94 SnPb 300 80 Contact Us Contact Us
AP54RHC132ALTP-T Flight TSSOP 14 6.50×5.11×0.94 SnPb 300 80 Contact Us Contact Us

Development Boards

Contact Us for information on available development boards

If you don’t see what you need, please let us know by contacting us at sales@apogeesemi.com

Contact Us

3 + 5 =

Apogee Semiconductor
840 Central Parkway East, Suite 140
Plano, TX 75074

Privacy Policy     •     Terms of Sale     •     Cookie Policy
© 2023 Apogee Semiconductor All Rights Reserved

AP54RHC132

AP54RHC132

Radiation Hardened Quad 2-input NAND Gate with Schmitt Inputs

Sampling Now

Datasheets

Product Overview

The AP54RHC132 is a radiation-hardened by design Quad 2-Input NAND gate with Schmitt-trigger inputs that is ideally suited for space, medical imaging, high-energy physics and other applications demanding radiation tolerance and high reliability. It is fabricated in a 180 nm CMOS process utilizing proprietary radiation-hardening techniques, delivering high resiliency to single-event effects (SEE) and to a total ionizing dose (TID) up to 30 krad (Si).

This device is a member of the Apogee Semiconductor AP54RHC logic family operating across a voltage supply range of 1.65 V to 5.5 V.

Zero-power penalty™ cold-sparing is supported, along with Class 2 ESD protection on all inputs and outputs. A proprietary output stage and robust power-on reset (POR) circuit allow the AP54RHC132 to be cold-spared in any redundant configuration with no static power loss on any pad of the device. The redundant output stage also features a high drive capability with low static power loss.

The AP54RHC132 also features a triple-redundant design throughout its entire circuitry, which allows it to be immune to single-event transients (SET) without requiring additional redundant devices.

This device provides four instances of the Boolean logical function NAND.

  • 1.65 VDC to 5 VDC operation
  • Inputs tolerant up to 5.5 VDC at any VCC
  • Provides logic-level down translation to VCC
  • Extended operating temperature range (-55°C to +125°C)
  • Proprietary cold-sparing capability with zero static power penalty
  • Built-in triple redundancy for enhanced reliability
  • Internal low-loss power-on reset (POR) circuitry ensures reliable power up and power down responses during hot plug and cold sparing operations
  • Class 2 ESD protection (4000 V HBM, 500 V CDM)
  • TID resilience of 30 krad (Si) or 300 krad (Si)
  • SEL resilient up to LET 80 MeV-cm2/mg
  • LEO Constellations
  • Small satellites
  • Medical Imaging

Order

Part
Number
Pedigree Package Pins Size (mm) Lead
Finish
TID
kRad (Si)
SEL
MeV/mg/cm2
RFQ Purchase
AP54RHC132ELTP-W Evaluation TSSOP 14 6.50×5.11×0.94 SnPb 30 80 Contact Us Contact Us
AP54RHC132ALTP-T Flight TSSOP 14 6.50×5.11×0.94 SnPb 30 80 Contact Us Contact Us

Development Boards

Contact Us for information on available development boards

If you don’t see what you need, please let us know by contacting us at sales@apogeesemi.com

Contact Us

5 + 14 =

Apogee Semiconductor
840 Central Parkway East, Suite 140
Plano, TX 75074

Privacy Policy     •     Terms of Sale     •     Cookie Policy
© 2023 Apogee Semiconductor All Rights Reserved