TalRad™ Process Design Kit

The Transistor-Adjusted-Layout for Radiation (TalRad™) Process Design Kit (PDK) is a rad-hard process design methodology that improves the radiation performance of commercial process technologies. Now available!

Benefits of the TalRad™ PDK

• Up to 10x improvement in TID performance*
• Little to no design size penalty
• Minimal process integration effort
• Standard transistor look and feel
• The TalRad™ transistor can be over 5 times smaller than their Annular counterparts for the longer channel lengths necessary for precision matching and high gain.
• The TalRad™ techniques can be implemented in any CMOS or BCD foundry to improve the radiation tolerance of bulk or shallow-trench-isolated silicon processes.
• Implementing TalRad™ includes the development of design-rule-checker and layout-vs-schematic rule decks, PCELLs and characterizing the radiation performance and reliability of the new components.

*compared to standard PDK components

What’s Included

The TalRad™ PDK includes:

• Annular 1.8V and 5V Transistors
  • Enclosed gate transistors that reduce the total ionizing dose (TID) induced leakage in the field oxide region of MOSFETs
  • Suitable for 300krad(Si) applications
• TalRad™ 1.8V and 5V Transistors
  • Modified transistors that reduce the TID induced leakage with minimal size impact compared to annular transistors
  • Reduced size and capacitance and improved performance compared to annular transistors
  • Designed for precision analog applications
  • Lower quiescent current
  • Suitable for 75krad(Si) applications
  • Radiation performance can be increased for more demanding applications
• TalRad™ ESD Cells
  • Class II 4kV ESD, 300krad(Si) radiation tolerance
• Roadmap devices and PDK improvements as they become available
  • TID resilient 50V laterally-diffused MOSFET (LDMOS)
  • 100-150 krad(Si) capable TalRad™ transistors
  • 3.3V annular and TalRad™ transistors

Get it Today

Start your rad-hard designs with the TalRad™ PDK and reduce your time to market!

Contact us for more information.